Method of manufacturing a semiconductor device having a gate electrode formed over a silicon oxide insulating layer

ABSTRACT

There is provided a method of removing trap levels and defects, which are caused by stress, from a single crystal silicon thin film formed by an SOI technique. First, a single crystal silicon film is formed by using a typical bonding SOI technique such as Smart-Cut or ELTRAN. Next, the single crystal silicon thin film is patterned to form an island-like silicon layer, and then, a thermal oxidation treatment is carried out in an oxidizing atmosphere containing a halogen element, so that an island-like silicon layer in which the trap levels and the defects are removed is obtained.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a method of manufacturing a thin filmtransistor (hereinafter referred to as TFT) using a single crystalsilicon thin film formed on a substrate having an insulating surface,and to a method of manufacturing a semiconductor device including asemiconductor circuit constituted by TFTs.

Incidentally, in the present specification, the semiconductor deviceindicates any device capable of functioning by using semiconductorcharacteristics, and the category thereof includes an electro-opticaldevice typified by a liquid crystal display device, a semiconductorcircuit in which TFTs are integrated, and an electronic apparatusincluding such an electro-optical device or semiconductor circuit as apart.

2. Description of the Related Art

In recent years, VLSI techniques have been remarkably developed, and anattention has been paid to an SOI (Silicon on Insulator) structure forrealizing low power consumption. This technique is such a technique thatan active region (a channel formation region) of an FET, which has beenconventionally formed of bulk single crystal silicon, is formed of asingle crystal silicon thin film.

In an SOI substrate, a buried oxide film made of silicon oxide exists onsingle crystal silicon, and a single crystal silicon thin film is formedthereon. Although various methods are known as methods of manufacturingsuch an SOI substrate, an attention has been recently paid to a bondedSOI substrate. The bonded SOI substrate realizes the SOI structure bybonding two silicon substrates as suggested by its name. This techniquehas a possibility that a single crystal silicon thin film can be formedin future also on a glass substrate or the like.

Among the bonded SOI substrates, in recent years, an attention has beenespecially paid to a technique called Smart-Cut (registered trademark ofSOITEC Co.). Smart-Cut method is a technique developed by SOITEC Co. inFrance in 1996, and is a method of manufacturing a bonded SOI substrateusing hydrogen embrittlement. The particular technique of the Smart-Cutmethod is disclosed in “Industrial Research Society (Kogyo Chosa Kai);Electronic Material, August, pp. 83-87, 1977” in detail.

As another method, there is known a technique called ELTRAN (trademarkof Canon K.K.). This technique is a method of manufacturing an SOIsubstrate using selective etching of a porous silicon layer. Theparticular technique of ELTRAN method is disclosed in “T. Yonehara, KSakaguchi and T. Hamaguchi: Appl. Phys. Lett. 43[3], 253 (1983)” indetail.

Even if either one of the methods is used, a single crystal silicon thinfilm having a desired thickness can be formed on a substrate. However,in both methods, since a high temperature heat treatment is carried outin a step of bonding two substrates, there arises a problem in whichintense stress is generated and remains in the formed single crystalsilicon film.

If the stress at this time remains in an active layer of a TFT formed ofthe single crystal silicon thin film, it may function as trap levels forcarriers or may become a factor to cause change in TFT characteristicswith time elapses. This problem is a very important problem whenSmart-Cut method or ELTRAN method is used, and a fundamental solutionthereof has been required.

SUMMARY OF THE INVENTION

The present invention has been made to solve the foregoing problem, andan object of the present invention is to provide a method of removingtrap levels and defects due to stress, from a single crystal siliconthin film formed by Smart-Cut method or ELTRAN method.

Another object of the present invention is to improve an operationperformance of a TFT that employs such a single crystal silicon-thinfilm, and further to improve an operation performance and reliability ofa semiconductor circuit or an electro-optical device employing TFTs.

Still another object of the present invention is to improve an operationperformance and reliability of an electronic equipment incorporatingsuch a semiconductor circuit or an electro-optical device.

According to one aspect of the present invention, a method ofmanufacturing a semiconductor device is characterized by comprising afirst step of forming a hydrogen added layer by adding hydrogen to afirst single crystal silicon substrate having a silicon oxide film on amajor surface, from a major surface side; a second step of bonding thefirst single crystal silicon substrate to a second substrate as asupport through the silicon oxide film; a third step of separating thefirst single crystal silicon substrate by a first heat treatment; afourth step of carrying out a second heat treatment to a single crystalsilicon thin film having remained on the second substrate in the thirdstep; a fifth step of flattening a major surface of the single crystalsilicon thin film; a sixth step of forming an island-like silicon layerby patterning the single crystal silicon thin film; and a seventh stepof carrying out a thermal oxidation treatment to the island-like siliconlayer.

According to another aspect of the present invention, a method ofmanufacturing a semiconductor device is characterized by comprising afirst step of forming a hydrogen added layer by adding hydrogen to afirst single crystal silicon substrate having a silicon oxide film on amajor surface, from a major surface side; a second step of bonding thefirst single crystal silicon substrate to a second substrate as asupport through the silicon oxide film; a third step of separating thefirst single crystal silicon substrate by a first heat treatment; afourth step of flattening a major surface of a single crystal siliconthin film having remained on the second substrate in the third step; afifth step of forming an island-like silicon layer by patterning thesingle crystal silicon thin film; and a sixth step of carrying out athermal oxidation treatment to the island-like silicon layer.

According to still another aspect of the present invention, a method ofmanufacturing a semiconductor device is characterized by comprising afirst step of forming a porous silicon layer by anodic oxidation of afirst single crystal silicon substrate; a second step of makingepitaxial growth of a single crystal silicon thin film on the poroussilicon layer; a third step of forming a silicon oxide film on thesingle crystal silicon thin film; a fourth step of bonding the firstsingle crystal silicon substrate to a second substrate as a supportthrough the silicon oxide film; a fifth step of carrying out a firstheat treatment to the first single crystal silicon substrate and thesecond substrate; a sixth step of polishing the first single crystalsilicon substrate until the porous silicon layer is exposed; a seventhstep of exposing the single crystal silicon thin film by removing theporous silicon layer; an eighth step of forming an island-like siliconlayer by patterning the single crystal silicon thin film; and a ninthstep of carrying out a thermal oxidation treatment to the island-likesilicon layer.

According to still another aspect of the present invention, a method ofmanufacturing a semiconductor device is characterized by comprising afirst step of forming a porous silicon layer by anodic oxidation of afirst single crystal silicon substrate; a second step of makingepitaxial growth of a single crystal silicon thin film on the poroussilicon layer; a third step of forming a silicon oxide film on thesingle crystal silicon thin film; a fourth step of bonding the firstsingle crystal silicon substrate to a second substrate as a supportthrough the silicon oxide film; a fifth step of polishing the firstsingle crystal silicon substrate until the porous silicon layer isexposed; a sixth step of exposing the single crystal silicon thin filmby removing the porous silicon layer; a seventh step of forming anisland-like silicon layer by patterning the single crystal silicon thinfilm; and an eighth step of carrying out a thermal oxidation treatmentto the island-like silicon layer.

The thermal oxidation treatment is carried out at a temperature in arange of from 1050 to 1150° C. (typically 1100° C.). When thetemperature exceeds about 1100° C., the stress relaxation of Si—O—Sibond occurs and the bonded interface is stabilized.

In addition, in the structure described above, it is preferable that thethermal oxidation treatment is carried out in an oxidizing atmospherecontaining a halogen element. As the oxidizing atmosphere containing thehalogen element, it is appropriate that a mixture gas of oxygen andhydrogen chloride (HCl) or a mixture gas of oxygen and nitrogentrifluoride (NF₃) is used.

Of course, as other methods, dry O₂ oxidation, wet O₂ oxidation, steam(water vapor) oxidation, pyrogenic oxidation (hydrogen burningoxidation), oxygen partial pressure oxidation, or the like may also beused.

The present invention has the structure as described above. However, themost important gist of the invention is to carry out the heat treatmentstep at a high temperature to the island-like silicon layer made of thesingle crystal silicon thin film formed by using Smart-Cut method orELTRAN method. By this, the stress within the single crystal siliconlayer is relaxed, and trap levels and defects caused by stressdistortions can be removed from an active layer of a TFT.

Thus, it becomes possible to restore the crystallinity of a final activelayer to almost the original state of the single crystal, and to improvethe operation performance and reliability of a TFT. Further, it becomespossible to improve the operation performance and reliability of anysemiconductor device in which a semiconductor circuit is constituted byTFTs.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A to 1C are views showing forming steps of an island-like siliconlayer of Embodiment 1;

FIGS. 2A to 2D are views showing forming steps of the island-likesilicon layer of Embodiment 1;

FIGS. 3A to 3D are views showing forming steps of an island-like siliconlayer of Embodiment 3;

FIGS. 4A to 4D are views showing forming steps of the island-likesilicon layer of Embodiment 3;

FIGS. 5A to 5D are views showing forming steps of a TFT of Embodiment 5;

FIG. 6 is a view showing the structure of a semiconductor circuit ofEmbodiment 6;

FIG. 7 is a view showing the structure of a semiconductor circuit ofEmbodiment 7; and

FIGS. 8A to 8F are views showing the structures of electronicapparatuses of Embodiment 8.

FIGS. 9A to 9D are views showing structures of electronic apparatuses ofEmbodiment 9.

FIGS. 10A to 10C are view showing structures of electronic apparatusesof Embodiment 10.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Detailed descriptions of preferred embodiments of the present inventionwill be made in conjunction with embodiments described below.

Embodiment 1

A structure of the present invention will be described with reference toFIGS. 1A to 1C and FIGS. 2A to 2D. First, a single crystal siliconsubstrate 101 is prepared. Next, a thermal oxidation treatment iscarried out to form a silicon oxide film 102 on a major surface(component formation surface) of the substrate. Although the filmthickness may be suitably determined by an operator, it is appropriatethat the thickness is made 0.05 to 0.5 μm. This silicon oxide film 102subsequently functions as a buried oxide film of an SOI substrate (FIG.1A).

Next, hydrogen is added from the major surface side of the singlecrystal silicon substrate 101 through the silicon oxide film 102. Inthis case, it is appropriate that an addition of hydrogen is carried outby ion implantation method in the form of hydrogen ions. Of course, theadding step of hydrogen can be carried out by other means. In this way,a hydrogen added layer 103 is formed. In this embodiment, the hydrogenion with a dosage of 1×10¹⁶ to 1×10¹⁷ atoms/cm² is added (FIG. 1B).

It should be noted that since the depth of the hydrogen added layer 103to be formed determines the film thickness of a single crystal siliconthin film later, precise control thereof is necessary. In thisembodiment, the control of a hydrogen addition profile in the depthdirection is carried out so that a single crystal silicon layer with athickness of 50 nm remains between the major surface of the singlecrystal silicon substrate 101 and the hydrogen added layer 103.

Next, the single crystal silicon substrate 101 is bonded to a substrate(second substrate) having an insulating surface. As the secondsubstrate, a substrate having a surface provided with a thin siliconoxide film is typically used. As the substrate, a substrate with highheat resistance, such as a silicon substrate, a quartz substrate, aceramic substrate, or a crystallized glass substrate, is used. In thisembodiment, a silicon substrate 105 provided with a thin silicon oxidefilm 104 is used (FIG. 1C).

At this time, since both interfaces to be bonded are silicon oxide filmshaving high hydrophilic properties, they adhere to each other withhydrogen bond by the reaction of moisture contained in both surfaces.

Next, a heat treatment (first heat treatment) of 400 to 600° C.(typically 500° C.) is carried out. By this heat treatment, volumechange of minute depletion occurs in the hydrogen added layer 103, sothat a fracture surface is produced along the hydrogen added layer 103.By this, the first single crystal silicon substrate 101 is separated,and the silicon oxide film 102 and a single crystal silicon thin film106 remains on the second substrate (FIG. 2A).

Next, as a second heat treatment, a furnace annealing step is carriedout in the temperature range of 1050 to 1150° C. In this step, at thebonded interface, stress relaxation of Si—O—Si bond occurs, so that thebonded interface becomes stable. That is, this becomes a step forcompletely making the single crystal silicon thin film 106 adhere ontothe second substrate 104. In this embodiment, this step is carried outat a temperature of 1100° C. for two hours.

The bonded interface is stabilized in this way, so that a buried oxidefilm 107 is defined. Incidentally, in FIG. 2B, a dotted line in theburied oxide film 107 indicates the bonded interface, and it means thatthe interface is strongly made to adhere.

Next, the surface of the single crystal silicon thin film 106 isflattened by a polishing step. Although any well-known means may be usedfor the polishing step, it is appropriate that the polishing techniquecalled CMP (Chemical Mechanical Polishing) is used.

Next, the single crystal silicon thin film 106 is patterned to formisland-like silicon layers 108 that subsequently become active layers ofTFTs (FIG. 2C).

The steps so far are the same as ordinary Smart-Cut method. Theimportant feature of the present invention is a thermal oxidation stepsubsequent to this.

Next, a thermal oxidation treatment is carried out for the plurality ofisland-like layers 108. Trap levels and defects existing inside theisland-like silicon layers 108 disappear through this thermal oxidationtreatment, so that island-like silicon layers 109 with restoredcrystallinity are formed. Reference numeral 110 denotes a silicon oxidefilm formed by the thermal oxidation treatment. This silicon oxide film110 may be used as a gate insulating film of a TFT.

Although it is satisfactory if this thermal oxidation treatment iscarried out in an oxidizing atmosphere, it is preferable that thethermal oxidation treatment is carried out in the oxidizing atmospherecontaining a halogen element. In this embodiment, the thermal oxidationtreatment at 800° C. for two hours is carried out in an oxidizingatmosphere containing nitrogen trifluoride (NF₃).

The object of this step is to relax the stress remaining inside theisland-like silicon layers 108. This point will be described.

When the heat treatment at a high temperature is applied at the step ofFIG. 2B, intense stress is applied to the single crystal silicon thinfilm 106. As a result, trap levels and the defects caused by the stressare produced inside the thin film. The trap levels and defects remaineven after the film is patterned into active layers. Such trap levelsnaturally become a cause to block the movement of carriers (electron orhole), and remarkably lower the TFT characteristics.

However, in the structure of the present invention, the thermaloxidation step of FIG. 2D is carried out, so that the trap levels andthe defects inside the island-like silicon layers is eliminated, and itis possible to realize a great improvement of the TFT characteristicsand an improvement of reliability.

Embodiment 2

This embodiment is an example in which the sequence of the manufacturingsteps of embodiment 1 is changed. Until the middle of the steps, stepsare the same as in embodiment 1, so that their explanation will beomitted.

First, in the same procedure as in embodiment 1, steps until thesubstrate separating step of FIG. 2A are completed. Next, after thesingle crystal silicon thin film remaining on the second substrate ispolished by means of such as CMP and is flattened, a patterning step iscarried out to form island-like silicon layers.

When the island-like silicon layers are formed, a thermal oxidationtreatment is carried out in that state. That is, the feature of thisembodiment resides in that the stabilization of the bonded interface andthe reduction of trap levels and defects in the island-like siliconlayers are carried out by the same heat treatment (temperature range is1050 to 1150° C.) simultaneously.

As described above, the second heat treatment for stabilizing the bondedinterface and the thermal oxidation step for reducing the trap levelsand the defects are separately carried out in embodiment 1. However,both the steps are carried out in one step in this embodiment, so thatthe number of steps can be reduced.

Embodiment 3

Embodiments 1 and 2 show examples in which trap levels and defects arereduced from the single crystal silicon thin films formed by Smart-Cutmethod. However, the present invention is also effective for a singlecrystal silicon thin film formed by other bonding SOI techniques.

In this embodiment, an example in which the present invention is appliedto a single crystal silicon thin film formed by ELTRAN method as one ofthe bonding SOI techniques will be described with reference to FIGS. 3Ato 3D and FIGS. 4A to 4D.

First, a single crystal silicon substrate 301 is prepared, and its majorsurface is subjected to anodic oxidation so that a porous silicon layer302 is formed. It is appropriate that the anodic oxidation step iscarried out in a mixture solution of hydrofluoric acid and ethanol.Since ELTRAN method itself is well known, the detailed description willbe omitted here.

A single crystal silicon thin film 303 having a thickness of 100 nm isformed on the porous silicon layer 302 by epitaxial growth (FIG. 3A).

After the single crystal silicon thin film 303 is formed, a thermaloxidation step is carried out so that a silicon oxide film 304 having athickness of 100 nm is formed on the single crystal silicon thin film.The silicon oxide film 304 subsequently functions as a buried oxide filmof an SOI substrate. In addition, by this thermal oxidation step, thethickness of a single crystal silicon thin film 305 becomes 50 nm (FIG.3B).

Next, the single crystal silicon substrate 301 is bonded to a ceramicsubstrate (second substrate) 307 having a thin silicon oxide film 306formed on its surface (FIG. 3C).

After bonding is finished, a heat treatment step is then carried out ata temperature in a range of from 1050 to 1150° C., so that the bondedinterface made of the silicon oxide films is stabilized. In thisembodiment, this heat treatment step is carried out at 1100° C. for twohours. Incidentally, as explained in embodiment 1 as well, a dotted lineindicates the bonded interface of complete adhesion (FIG. 3D).

Next, the single crystal silicon substrate 301 is polished from its backside by a mechanical polishing such as CMP, and polishing is ended whenthe porous silicon layer 302 is exposed. In this way, the state of FIG.4A is obtained.

Next, the porous silicon layer 302 is selectively removed by wetetching. As an etchant to be used, a mixture solution of a hydrofluoricacid solution and a hydrogen peroxide solution is suitable. It isreported that a mixture solution containing 49% HF and 30% H₂O₂ at aratio of 1:5 has a selecting ratio of not less than hundred thousandtimes between a single crystal silicon layer and a porous silicon layer.

In this way, the state of FIG. 4B is obtained. In this state, such astate is obtained that a buried oxide film 308 (strictly speaking, alaminate film of the silicon oxide films 304 and 306) is provided on theceramic substrate 307, and the single crystal silicon thin film 305 isformed thereon.

Next, the single crystal silicon thin film 305 is subjected topatterning, so that island-like silicon layers 309 are formed. Ofcourse, each of the island-like silicon layers is basically used as anactive layer of a TFT (FIG. 4C).

The numerical value conditions and the like explained so far are notlimited to those of this embodiment, but the technique of well-knownELTRAN method can be used as it is.

After the island-like silicon layers 309 are formed, a thermal oxidationstep of the feature of the present invention is carried out. In thisembodiment, the thermal oxidation treatment at 950° C. for 30 minutes iscarried out in the state where a hydrogen chloride gas is mixed in anoxygen atmosphere. Of course, other than hydrogen chloride, anotherhalogen-based gas such as nitrogen trifluoride may be mixed. Also, itdoes not matter if the atmosphere is a well-known thermal oxidationatmosphere of dry oxygen, wet oxygen or the like (FIG. 4D).

In this way, trap levels and defects in the island-like silicon layers309 disappear, so that it is possible to form island-like silicon layers310 made of single-crystal silicon layers that have no factor to blockthe movement of carriers. Also, a silicon oxide film 311 formed at thisstage can be directly used also as a gate insulating film of a TFT.

In the manner described above, the island-like silicon layer withoutdefects or the like is formed, and when a TFT having the silicon layeras its active layer is manufactured, the operation performance andreliability of the TFT can be greatly improved. With this, it is alsopossible to improve the operation performance and reliability of asemiconductor circuit employing TFTs, an electro-optical device, andfurther, an electronic apparatus.

Embodiment 4

This embodiment is an example in which the sequence of the manufacturingsteps of embodiment 3 is changed. Until the middle of steps, steps arethe same as in embodiment 3, their description will be omitted.

First, in the same procedure as in embodiment 3, steps until the bondingstep of FIG. 3C are completed. Next, the heat treatment step of FIG. 3Dis not carried out, but advances to the polishing step shown in FIG. 4A.Then the steps until the patterning step of FIG. 4C are completed.

After the island-like silicon layers are formed, a thermal oxidationtreatment is carried out in that state. That is, the feature of thisembodiment is that the stabilization of the bonded interface and thereduction of trap levels and defects in the island-like silicon layersare carried out by the same heat treatment (temperature range is 1050 to1150° C.) simultaneously.

As described above, in embodiment 3, the heat treatment for stabilizingthe bonded interface and the thermal oxidation step for reducing thetrap levels and defects are separately carried out in the embodiment 3.However, in this embodiment, both steps are carried out in one step sothat the number of steps can be reduced.

Embodiment 5

In this embodiment, a case where a TFT is manufactured by using anisland-like silicon layer formed with the structure of embodiments 1 to4 will be described with reference to FIGS. 5A to 5D.

First, in accordance with either one of manufacturing steps ofembodiments 1 to 4, an island-like silicon layer 501 is formed.Incidentally, in this embodiment, a gate insulating film (silicon oxidefilm) 502 is formed simultaneously with a thermal oxidation step forremoving the trap levels and the defects in the island-like siliconlayer 501. Then a gate electrode 503 made of an n-type polysilicon filmis formed on the gate insulating film 502 (FIG. 5A).

Next, an impurity for giving an n-type or p-type is added using the gateelectrode 503 as a mask in a self-aligning manner. In this embodiment,as an example in which an n-type TFT is manufactured, phosphorus isadded as the impurity. Of course, when a p-type TFT is formed, it isappropriate that boron is added. By this step, an impurity region 504 isformed (FIG. 5B).

In addition, it is also effective to control a threshold value voltageof the TFT by adding an opposite conductivity impurity (for example,boron for the n-type TFT) in the silicon layer just under the gateelectrode. This impurity may be added by through doping from the aboveof the gate electrode, or may be previously added prior to the formationof the gate electrode.

When the state of FIG. 5B is obtained in this way, a side wall (sidespacer) SOS made of a silicon oxide film is next formed. The side wall505 can be formed by using a well-known anisotropic etching technique.

After the side wall 505 is formed, an adding step of phosphorus is againcarried out, so that an impurity region with a concentration higher thanthe foregoing impurity region 504 is formed. Through the two impurityadding steps, a source region 506, a drain region 507, an LDD region508, and a channel formation region 509 are defined (FIG. 5C).

Next, a thermal annealing step is carried out, so that the impurityadded in the former step is activated and damage of the silicon layercaused at the time of addition is repaired. It is appropriate that thisthermal annealing step is carried out by using any one of or combinationof a furnace annealing, a laser annealing, and a lamp annealing.

Next, in the state of FIG. 5C, the entire surface is covered with acobalt film (not shown), and a thermal annealing treatment is carriedout, so that a cobalt silicide layer 510 is formed. Other than cobalt, ametal film of titanium, tungsten, or the like may be used. Since thisstep is a well-known salicide technique, its detailed description willbe omitted.

Next, an interlayer insulating film 511 made of a resin material andhaving a thickness of 1 m is formed. As the interlayer insulating film511, a silicon oxide film, a silicon nitride film, or a silicon nitrideoxide film may be used, or these insulating films may be laminated.

Next, contact holes are formed in the interlayer insulating film 511,and a source wiring line 512 and a drain wiring line 513 made of amaterial containing aluminum as its main ingredient are formed. Finally,the furnace annealing at 350° C. for two hours is carried out for thewhole component in a hydrogen atmosphere, so that hydrogenating iscompleted.

In this way, the TFT as shown in FIG. 5D is obtained. It should be notedthat the structure described in this embodiment is merely shown as anexample, and the TFT structure to which the present invention can beapplied is not limited to this. Therefore, the present invention can beapplied to a TFT of any well-known top gate structure.

Further, in the structure of FIG. 5D, when a pixel electrode (not shown)electrically connected to the drain wiring line 513 is formed bywell-known means, it is also easy to form a pixel switching element ofan active matrix type display device.

That is, the present invention is a very effective technique also as amanufacturing method of an electro-optical device such as a liquidcrystal display device or an EL (electroluminescence) display device.

As described above, the present invention can be applied to TFTs of anystructure, and various semiconductor circuits can be constructed byusing the present invention. That is, it can be said that the presentinvention can be applied to any semiconductor device including asemiconductor circuit formed of TFTs.

Embodiment 6

FIG. 6 of this embodiment shows an example of a liquid crystal displaydevice in which a semiconductor circuit is constructed by TFTs formed inaccordance with the manufacturing steps of embodiment 5. Sincewell-known means can be used for a manufacturing method of a pixel TFT(pixel switching element) and/or a peripheral driver circuit and for acell assembling step, the detailed description will be omitted.

In FIG. 6, reference numeral 11 denotes a substrate having an insulatingsurface, 12 denotes a pixel matrix circuit, 13 denotes a source drivercircuit, 14 denotes a gate driver circuit, 15 denotes an oppositesubstrate, 16 denotes an FPC (flexible printed circuit), and 17 denotesa signal processing circuit.

As the signal processing circuit 17, it is possible to form a circuit,such as a D/A converter, a γ correction circuit, or a signal dividingcircuit, which performs such a process that an IC has conventionallysubstituted. Of course, it is also possible that an IC chip is providedon a glass substrate and signal processing is carried out on the ICchip.

Further, in this embodiment, the description has been made on the liquidcrystal display device as an example. However, it is needless to saythat the present invention can be applied to an EL (electroluminescence)display device or an EC (electrochromic) display device if the displaydevice is of an active matrix type.

Incidentally, when the liquid crystal display device shown in thisembodiment is manufactured, any structure of embodiments 1 to 4 may beused.

Embodiment 7

The present invention can be applied to any conventional IC technique.That is, the present invention can be applied to any semiconductorcircuit currently available on the market. For example, the presentinvention may be applied to a microprocessor such as a RISC processor orASIC processor integrated on one chip, or may be applied to any circuitfrom a signal processing circuit such as a D/A convertor to a highfrequency circuit for a portable equipment (cellular phone, PHS, mobilecomputer).

FIG. 7 shows an example of a microprocessor. The microprocessor istypically constructed by a CPU core 21, a RAM 22, a clock controller 23,a cache memory 24, a cache controller 25, a serial interface 26, an I/Oport 27, and the like.

Of course, FIG. 7 shows a simplified example of a microprocessor, and avariety of circuit designs are carried out for an actual microprocessoraccording to its use.

However, in any microprocessor with any function, a portion functioningas the center is an IC (Integrated Circuit) 28. The IC 28 is afunctional circuit in which an integrated circuit formed on asemiconductor chip 29 is protected by a ceramic or the like.

The integrated circuit formed on the semiconductor chip 29 isconstructed by an N-channel TFT 30 and a P-channel TFT 31 having thestructure of the present invention.

Incidentally, when a basic circuit is constructed by a CMOS circuitincluding the N-channel TFT 30 and the P-channel TFT 31 as a minimumunit, power consumption can be suppressed.

In addition, the microprocessor shown in this embodiment is incorporatedon various electronic equipments and functions as the central circuit.As a typical equipment, a personal computer, a portable informationterminal equipment, and any other electric home products can beenumerated. Also, a computer for controlling a vehicle (car, electrictrain, etc.) can also be enumerated.

Embodiment 8

CMOS circuits and pixel active matrix circuits produced by theembodiments of the present invention can be applied to a plurality ofelectro-optical devices (e.g. an active matrix type liquid crystaldisplay, an active matrix type EL display, and an active matrix type ECdisplay). That is, the present invention can be carried out for all theelectric apparatus including such the electro-optical devices as displaymedia.

As such electronic apparatus, a video camera, a digital camera, aprojector (rear type or front type), a head mount display (a goggle typedisplay), a car navigation system, a personal computer, a portableinformation terminal (mobile computer, portable telephone, electricbook, etc.) and the like are enumerated. Examples of those are shown inFIG. 8A to FIG. 8F, FIG. 9A to FIG. 9D, and FIG. 10A to FIG. 10C.

FIG. 8A shows a personal computer which is constituted by a main body2001, an image input portion 2002, a display device 2003, and a keyboard2004. The present invention can be applied to the image input portion2002, the display device 2003, and other signal control circuits.

FIG. 8B shows a video camera which is constituted by a main body 2101, adisplay device 2102, an audio input portion 2103, an operation switch2104, a battery 2105, and an image receiving portion 2106. The presentinvention can be applied to the display device 2102, the audio inputportion 2103, and other signal control circuits.

FIG. 8C shows a mobile computer which is constituted by a main body2201, a camera portion 2202, an image receiving portion 2203, anoperation switch 2204, and a display device 2205. The present inventioncan be applied to the display device 2205 and other signal controlcircuits.

FIG. 8D shows a goggle type display which is constituted by a main body2301, a display device 2302, and an arm portion 2303. The presentinvention can be applied to the display device 2302 and other signalcontrol circuits.

FIG. 8E shows a player apparatus which is equipped with a recordingmedium for recording a program (hereinafter, called “a recordingmedium”). The player apparatus is constituted by a main body 2401, adisplay device 2402, a speaker portion 2403, a recording medium 2404, anoperation switch 2405 and an eternal input portion 2406. This apparatusincludes a DVD (digital Versatile Disc), a CD and the like as therecording medium for appreciating music and movie, playing a game, andInternet. The present invention can be applied to the display device2402 and other signal control circuits.

FIG. 8F shows a digital camera which is constituted by a main boy 2501,a display device 2502, an eyepiece portion 2503, an operation switch2504 and an image receiving portion (not shown). The present inventioncan be applied to the display device 2502 and other signal controlcircuits.

FIG. 9A shows a front type projector which is constituted by a lightsource optical system and a display device 2601, and a screen 2602. Thepresent invention can be applied to the display device and other signalcontrol circuits.

FIG. 9B shows a rear type projector which is constituted by a main body2701, a light source optical system and a display device 2702, a mirror2703 and a screen 2704. The present invention can be applied to thedisplay device and other signal control circuits.

FIG. 9C shows an example structure of a light source optical system anda display device 2601 in FIG. 9A, or 2702 in FIG. 9B. Each of numerals2601 and 2702 includes a light source optical system 2801, mirrors 2802,2804-2806, a dichroic mirror 2803, another optical system 2807, adisplay device 2808, a phase difference plate 2809, and a projectionoptical system 2810. The projection optical system 2810 is constitutedby a plurality of optical lenses equipped with a projection lens. Such aprojection system as shown in FIG. 9C is called a three-plate type sincethis structure includes three plates of display devices. Further, it isproper for a researcher to form, in an optical path indicated by anarrow in FIG. 9C, an optical lens, a film with a polarizingcharacteristics, a film to control a phase difference, an IR film, etc.

FIG. 9D shown an example structure of a light source optical system 2801in FIG. 9C. In this embodiment, the light source optical system 2801includes a reflector 2811, a light source 2812, lens arrays 2813 and2814, a polarizing conversion element 2815 and a condenser lens 2816.However, the present invention is not specifically limited by thisembodiment because it is just an example. For example, in an opticalpath, an optical lens, a film with a polarizing characteristics, a filmto control a phase difference, an IR film, etc. can be properly formed.

While FIG. 9C shows an example of the three-plate type, FIG. 10A showsan example of single-plate type. A light source optical system 2901, adisplay device 2902, a projection optical system 2903 are included in alight source optical system and a display device shown in FIG. 10A. Itis possible to apply the light source optical system and display deviceshown in FIG. 10A to the light source optical system and display device2601 shown in FIG. 9A, or 2702 in FIG. 9B. Further, the light sourceoptical system 2901 can be applied by the light source optical systemshown in FIG. 9D. In addition, the display device 2902 is equipped witha color filter (not shown), so that display image is colored.

FIG. 10B shows an applied example of a light source optical system and adisplay device which is applied by FIG. 10A. Instead of forming a colorfilter, a display image is colored by RGB rotary color filter disc 2905.It is possible to apply the light source optical system and displaydevice shown in FIG. 10B to the light source optical system and displaydevice 2601 shown in FIG. 9A, or 2702 in FIG. 9B.

A structure of the light source optical system and display device, asshown in FIG. 10C is called as a color-filterless single-plate type. Inthis structure, a display device 2916 is equipped with a microlens array2915, and a display image is colored by a dichroic mirror (Green) 2912,a dichroic mirror (Red) 2913 and a dichroic mirror (Blue). A projectionoptical system 2917 is constituted by a plurality of lenses including aprojection lens. It is possible to apply the light source optical systemand display device shown in FIG. 10C to the light source optical systemand display device 2601 shown in FIG. 9A, or 2702 in FIG. 9B. Further,as the light-source optical system 2911, an optical system having acoupling lens and a collimating lens other than a light source can beapplied.

As described above, the present invention can be applied in a largerange, so that it is possible to apply to any electric apparatus inevery field. In addition, the electric apparatus in the instantinvention can be realized by using any structure combined withEmbodiments 1-7.

As is apparent from the foregoing description, the present invention hasthe following effects.

When a single crystal silicon thin film is formed by a bonding SOItechnique typified by Smart-Cut method or ELTRAN method, thecrystallinity of the inside of a formed silicon layer can be restored toalmost complete single crystal. That is, it becomes possible to use asingle crystal silicon thin film with few trap levels and defects as anactive layer of a TFT.

Thus, it becomes possible to greatly improve the operation performanceand reliability of a plurality of TFTs formed on a substrate. Also, withthe above-mentioned improvements, it is possible to realize animprovement of the operation performance and reliability of asemiconductor circuit formed of a plurality of TFTs, an electro-opticaldevice, and further, an electronic apparatus incorporating thesemiconductor circuit or electro-optical device therein.

1. A method of manufacturing a semiconductor device, said methodcomprising the steps of: forming a silicon oxide film on a first singlecrystal semiconductor substrate, the first single crystal semiconductorsubstrate comprising silicon; adding hydrogen to the first singlecrystal semiconductor substrate through the silicon oxide film to form ahydrogen added layer in the first single crystal semiconductorsubstrate; bonding the first single crystal semiconductor substrate to asecond silicon substrate with the silicon oxide film disposed betweenthe first single crystal semiconductor substrate and the second siliconsubstrate; separating the first single crystal semiconductor substrateat the hydrogen added layer by a heat treatment so that a single crystalsemiconductor film is formed over the second silicon substrate; forminga semiconductor island by patterning the single crystal semiconductorfilm; oxidizing a surface of the semiconductor island in an oxidizingatmosphere to form an insulating layer comprising silicon oxide on thesemiconductor island; forming a gate electrode over the semiconductorisland with the insulating layer interposed therebetween; forming sidewalls adjacent to side surfaces of the gate electrode wherein thesemiconductor island extends beyond outer side edges of the side walls;forming a metal film on at least portions of the semiconductor island;heating the metal film to form first metal silicide layers in theportions of the semiconductor island; and forming an insulating filmcomprising silicon nitride at least over the gate electrode and thesemiconductor island, the insulating film being in direct contact withthe gate electrode.
 2. The method according to claim 1 wherein thehydrogen is added at a dosage of 1×10¹⁶ to 1×10¹⁷ atoms/cm².
 3. Themethod according to claim 1 wherein the step of oxidizing a surface ofthe semiconductor island is performed at a temperature within a range of1050 to 1150° C.
 4. The method according to claim 1 wherein the step offorming the silicon oxide film on the first single crystal semiconductorsubstrate is performed by oxidation of a surface of the first singlecrystal semiconductor substrate.
 5. A method of manufacturing asemiconductor device, said method comprising the steps of: forming asilicon oxide film on a first single crystal semiconductor substrate,the first single crystal semiconductor substrate comprising siliconwherein a thickness of the silicon oxide film is 0.05 to 0.5 μm; addinghydrogen to the first single crystal semiconductor substrate through thesilicon oxide film to form a hydrogen added layer in the first singlecrystal semiconductor substrate; bonding the first single crystalsemiconductor substrate to a second silicon substrate with the siliconoxide film disposed between the first single crystal semiconductorsubstrate and the second silicon substrate; separating the first singlecrystal semiconductor substrate at the hydrogen added layer by a heattreatment so that a single crystal semiconductor film is formed over thesecond silicon substrate; forming a semiconductor island by patterningthe single crystal semiconductor film without exposing a surface of thesecond silicon substrate under the silicon oxide film; oxidizing asurface of the semiconductor island in an oxidizing atmospherecontaining a halogen element to form an insulating layer comprisingsilicon oxide on the semiconductor island; forming a gate electrode overthe semiconductor island with the insulating layer interposedtherebetween; and forming an insulating film comprising silicon nitrideat least over the gate electrode and the semiconductor island, theinsulating film being in direct contact with the gate electrode.
 6. Amethod of manufacturing a semiconductor device, said method comprisingthe steps of: forming a silicon oxide film on a first single crystalsemiconductor substrate, the first single crystal semiconductorsubstrate comprising silicon wherein a thickness of the silicon oxidefilm is 0.05 to 0.5 μm; adding hydrogen to the first single crystalsemiconductor substrate through the silicon oxide film to form ahydrogen added layer in the first single crystal semiconductorsubstrate; bonding the first single crystal semiconductor substrate to asecond silicon substrate with the silicon oxide film disposed betweenthe first single crystal semiconductor substrate and the second siliconsubstrate; separating the first single crystal semiconductor substrateat the hydrogen added layer by a heat treatment so that a single crystalsemiconductor film is formed over the second silicon substrate; forminga semiconductor island by patterning the single crystal semiconductorfilm; oxidizing a surface of the semiconductor island in an oxidizingatmosphere containing a halogen element to form an insulating layercomprising silicon oxide on the semiconductor island; forming a gateelectrode over the semiconductor island with the insulating layerinterposed therebetween; forming a source region and a drain region inthe semiconductor island; and performing hydrogenation by a heattreatment on at least the semiconductor island.
 7. The method accordingto claim 6 wherein the hydrogen is added at a dosage of 1×10¹⁶ to 1×10¹⁷atoms/cm².
 8. The method according to claim 6 wherein the step ofoxidizing a surface of the semiconductor island is performed at atemperature within a range of 1050 to 1150° C.
 9. The method accordingto claim 6 wherein the step of forming the silicon oxide film on thefirst single crystal semiconductor substrate is performed by oxidationof a surface of the first single crystal semiconductor substrate.
 10. Amethod of manufacturing a semiconductor device, said method comprisingthe steps of: forming a silicon oxide film on a first single crystalsemiconductor substrate, the first single crystal semiconductorsubstrate comprising silicon; adding hydrogen to the first singlecrystal semiconductor substrate through the silicon oxide film to form ahydrogen added layer in the first single crystal semiconductorsubstrate; bonding the first single crystal semiconductor substrate to asecond silicon substrate with the silicon oxide film disposed betweenthe first single crystal semiconductor substrate and the second siliconsubstrate; separating the first single crystal semiconductor substrateat the hydrogen added layer by a heat treatment so that a single crystalsemiconductor film is formed over the second silicon substrate; forminga semiconductor island by patterning the single crystal semiconductorfilm without exposing a surface of the second silicon substrate underthe silicon oxide film; heating the semiconductor island in an oxidizingatmosphere containing a halogen element to form an insulating layercomprising silicon oxide on the semiconductor island; forming a gateelectrode over the semiconductor island with the insulating layerinterposed therebetween; forming a source region and a drain region inthe semiconductor island; and performing hydrogenation by a heattreatment on at least the semiconductor island.
 11. The method accordingto any one of claim 10 or 5 wherein the hydrogen is added at a dosage of1×10¹⁶ to 1×10¹⁷ atoms/cm².
 12. The method according to claim 10 whereinthe step of heating the semiconductor island is performed at atemperature within a range of 1050 to 1150° C.
 13. The method accordingto any one of claim 10 or 5 wherein the step of forming the siliconoxide film on the first single crystal semiconductor substrate isperformed by oxidation of a surface of the first single crystalsemiconductor substrate.
 14. The method according to any one of claim 1,6 or 5 wherein the step of oxidizing the surface of the semiconductorisland is a thermal oxidation.
 15. The method according to claim 5wherein the step of oxidizing a surface of the semiconductor island isperformed at a temperature within a range of 1050 to 1150° C.
 16. Amethod of manufacturing a semiconductor device, said method comprisingthe steps of: providing a single crystal semiconductor film formed by:forming a silicon oxide film on a first single crystal semiconductorsubstrate, the first single crystal semiconductor substrate comprisingsilicon; adding hydrogen to the first single crystal semiconductorsubstrate through the silicon oxide film to form a hydrogen added layerin the first single crystal semiconductor substrate; bonding the firstsingle crystal semiconductor substrate to a second silicon substratewith the silicon oxide film disposed between the first single crystalsemiconductor substrate and the second silicon substrate; and separatingthe first single crystal semiconductor substrate at the hydrogen addedlayer by a heat treatment so that a single crystal semiconductor film isformed over the second silicon substrate; forming a semiconductor islandby patterning the single crystal semiconductor film; oxidizing a surfaceof the semiconductor island in an oxidizing atmosphere to form aninsulating layer comprising silicon oxide on the semiconductor island;forming a gate electrode over the semiconductor island with theinsulating layer interposed therebetween; forming side walls adjacent toside surfaces of the gate electrode wherein the semiconductor islandextends beyond outer side edges of the side walls; forming a metal filmon at least portions of the semiconductor island; heating the metal filmto form first metal silicide layers in the portions of the semiconductorisland; and forming an insulating film comprising silicon nitride atleast over the gate electrode and the semiconductor island, theinsulating film being in direct contact with the gate electrode.
 17. Themethod according to claim 16 wherein the step of oxidizing a surface ofthe semiconductor island is performed at a temperature within a range of1050 to 1150° C.
 18. A method of manufacturing a semiconductor device,said method comprising the steps of: forming a semiconductor island bypatterning a single crystal semiconductor film; oxidizing a surface ofthe semiconductor island in an oxidizing atmosphere to form aninsulating layer comprising silicon oxide on the semiconductor island;forming a gate electrode over the semiconductor island with theinsulating layer interposed therebetween; forming side walls adjacent toside surfaces of the gate electrode wherein the semiconductor islandextends beyond outer side edges of the side walls; forming a metal filmon at least portions of the semiconductor island; heating the metal filmto form first metal silicide layers in the portions of the semiconductorisland; and forming an insulating film comprising silicon nitride atleast over the gate electrode and the semiconductor island, theinsulating film being in direct contact with the gate electrode, whereinthe single crystal semiconductor film has been prepared by forming asilicon oxide film on a first single crystal semiconductor substrate,the first single crystal semiconductor substrate comprising silicon,adding hydrogen to the first single crystal semiconductor substratethrough the silicon oxide film to form a hydrogen added layer in thefirst single crystal semiconductor substrate, bonding the first singlecrystal semiconductor substrate to a second silicon substrate with thesilicon oxide film disposed between the first single crystalsemiconductor substrate and the second silicon substrate, and separatingthe first single crystal semiconductor substrate at the hydrogen addedlayer by a heat treatment so that the single crystal semiconductor filmis formed over the second silicon substrate.
 19. The method according toclaim 18 wherein the step of oxidizing a surface of the semiconductorisland is performed at a temperature within a range of 1050 to 1150° C.20. A method of manufacturing a semiconductor device, said methodcomprising the steps of: providing a single crystal semiconductor filmformed by: forming a silicon oxide film on a first single crystalsemiconductor substrate, the first single crystal semiconductorsubstrate comprising silicon wherein a thickness of the silicon oxidefilm is 0.05 to 0.5 μm; adding hydrogen to the first single crystalsemiconductor substrate through the silicon oxide film to form ahydrogen added layer in the first single crystal semiconductorsubstrate; bonding the first single crystal semiconductor substrate to asecond silicon substrate with the silicon oxide film disposed betweenthe first single crystal semiconductor substrate and the second siliconsubstrate; and separating the first single crystal semiconductorsubstrate at the hydrogen added layer by a heat treatment so that asingle crystal semiconductor film is formed over the second siliconsubstrate; forming a semiconductor island by patterning the singlecrystal semiconductor film without exposing a surface of the secondsilicon substrate under the silicon oxide film; oxidizing a surface ofthe semiconductor island in an oxidizing atmosphere containing a halogenelement to form an insulating layer comprising silicon oxide on thesemiconductor island; forming a gate electrode over the semiconductorisland with the insulating layer interposed therebetween; and forming aninsulating film comprising silicon nitride at least over the gateelectrode and the semiconductor island, the insulating film being indirect contact with the gate electrode.
 21. The method according toclaim 20 wherein the step of oxidizing a surface of the semiconductorisland is performed at a temperature within a range of 1050 to 1150° C.22. A method of manufacturing a semiconductor device, said methodcomprising the steps of: forming a semiconductor island by patterning asingle crystal semiconductor film without exposing a surface of a secondsilicon substrate under a silicon oxide film; oxidizing a surface of thesemiconductor island in an oxidizing atmosphere containing a halogenelement to form an insulating layer comprising silicon oxide on thesemiconductor island; forming a gate electrode over the semiconductorisland with the insulating layer interposed therebetween; and forming aninsulating film comprising silicon nitride at least over the gateelectrode and the semiconductor island, the insulating film being indirect contact with the gate electrode, wherein the single crystalsemiconductor film has been prepared by forming a silicon oxide film ona first single crystal semiconductor substrate, the first single crystalsemiconductor substrate comprising silicon wherein a thickness of thesilicon oxide film is 0.05 to 0.5 μm, adding hydrogen to the firstsingle crystal semiconductor substrate through the silicon oxide film toform a hydrogen added layer in the first single crystal semiconductorsubstrate, bonding the first single crystal semiconductor substrate tothe second silicon substrate with the silicon oxide film disposedbetween the first single crystal semiconductor substrate and the secondsilicon substrate, and separating the first single crystal semiconductorsubstrate at the hydrogen added layer by a heat treatment so that thesingle crystal semiconductor film is formed over the second siliconsubstrate.
 23. The method according to claim 22 wherein the step ofoxidizing a surface of the semiconductor island is performed at atemperature within a range of 1050 to 1150° C.